| CPC G02F 1/16766 (2019.01) [G02F 1/133345 (2013.01); G02F 1/136227 (2013.01); G02F 1/167 (2013.01); G02F 1/16757 (2019.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/60 (2025.01)] | 8 Claims |
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1. A substrate comprising:
a gate electrode:
a source electrode;
a drain electrode located next to the source electrode in a first direction;
a first oxide semiconductor;
a second oxide semiconductor located next to the first oxide semiconductor in a second direction intersecting the first direction;
a first insulating layer; and
a second insulating layer, wherein
both of the first oxide semiconductor and the second oxide semiconductor overlap the gate electrode,
the first insulating layer contacts both of the first oxide semiconductor and the second oxide semiconductor,
the source electrode contacts both of the first oxide semiconductor and the second oxide semiconductor via a first opening formed in the first insulating layer,
the drain electrode contacts both of the first oxide semiconductor and the second oxide semiconductor via a second opening formed in the first insulating layer,
the second insulating layer contacts the first insulating layer between the first opening and the second opening in the first direction,
both of the first opening and the second opening have a long axis extending in the second direction and a short axis extending in the first direction,
the first opening, which overlaps both of the first oxide semiconductor and the second oxide semiconductor, is a single opening, and
the second opening, which overlaps both of the first oxide semiconductor and the second oxide semiconductor, is a single opening.
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