US 12,345,920 B2
Semiconductor device and method of making
Yi-Chen Chen, Jhubei (TW); Lee-Chuan Tseng, New Taipei (TW); and Shih-Wei Lin, Taipei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu (TW)
Filed on Mar. 4, 2024, as Appl. No. 18/594,314.
Application 18/594,314 is a division of application No. 16/802,704, filed on Feb. 27, 2020, granted, now 11,921,325.
Prior Publication US 2024/0210624 A1, Jun. 27, 2024
Int. Cl. G02B 6/132 (2006.01); G02B 6/12 (2006.01)
CPC G02B 6/132 (2013.01) [G02B 2006/12121 (2013.01); G02B 2006/12138 (2013.01); G02B 2006/12142 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first dielectric structure defined by a first dielectric layer and a second dielectric layer over the first dielectric layer;
a waveguide in the first dielectric structure between the first dielectric layer and the second dielectric layer; and
a substrate underlying the waveguide, wherein:
a first void is defined between a bottom surface of the first dielectric layer and the substrate,
the first void underlies the waveguide, and
a portion of the first dielectric layer or a portion of the second dielectric layer extends below the bottom surface of the first dielectric layer to separate a sidewall of the substrate from the first void.