US 12,345,754 B2
Analyzing an operation of a power semiconductor device
Angus Bryant, Cambridge (GB)
Assigned to MASCHINENFABRIK REINHAUSEN GMBH, Regensburg (DE)
Appl. No. 17/802,969
Filed by Maschinenfabrik Reinhausen GmbH, Regensburg (DE)
PCT Filed Feb. 12, 2021, PCT No. PCT/EP2021/053440
§ 371(c)(1), (2) Date Aug. 29, 2022,
PCT Pub. No. WO2021/175564, PCT Pub. Date Sep. 10, 2021.
Claims priority of application No. 20160411 (EP), filed on Mar. 2, 2020.
Prior Publication US 2023/0096094 A1, Mar. 30, 2023
Int. Cl. G01R 31/26 (2020.01)
CPC G01R 31/2642 (2013.01) [G01R 31/2603 (2013.01); G01R 31/2619 (2013.01); G01R 31/2628 (2013.01); G01R 31/263 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A method for analyzing an operation of a power semiconductor device, the method comprising:
providing a set of reference voltages of the device and a set of corresponding reference currents;
measuring, within a predetermined time-interval, Nframe on-state voltages and Nframe corresponding on-state currents of the device to obtain Nframe measurement points, wherein Nframe is an integer number equal to or greater than 2;
adapting the set of reference voltages by carrying out a least squares fit to the Nframe measurement points; and
using the adapted set of reference voltages to analyze the operation of the power semiconductor device,
wherein for the least squares fit, a piecewise-linear approximation between each two adjacent measurement points is assumed.