US 12,345,676 B2
Field-effect transistor-based biosensor
Koen Martens, Ghent (BE); Karolien Jans, Tessenderlo (BE); Pol Van Dorpe, Spalbeek (BE); and Gabrielle Woronoff, Brussels (BE)
Assigned to Imec VZW, Leuven (BE)
Filed by IMEC VZW, Leuven (BE)
Filed on Nov. 4, 2019, as Appl. No. 16/673,342.
Claims priority of application No. 18204356 (EP), filed on Nov. 5, 2018.
Prior Publication US 2020/0141898 A1, May 7, 2020
Int. Cl. G01N 27/414 (2006.01); B01L 3/00 (2006.01); C12Q 1/00 (2006.01)
CPC G01N 27/4145 (2013.01) [B01L 3/502 (2013.01); C12Q 1/005 (2013.01); B01L 2300/0636 (2013.01); B01L 2300/12 (2013.01); B01L 2400/0415 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A sensor comprising a field effect transistor for sensing a substrate of an enzyme in a sample including electrolyte, the field effect transistor comprising:
an active region comprising a source region, a drain region, and a channel region between the source region and the drain region;
a dielectric region on the channel region;
a binding layer or a linker present on the dielectric region;
the enzyme coupled to the dielectric region by being bound to the binding layer or the linker, the enzyme having an active site for interacting with the substrate, wherein a portion of the enzyme closest to the dielectric region on the channel region is within 1 nm of the dielectric region;
an electrolyte-screening layer coupled to the dielectric region and covering part of the enzyme while leaving the active site uncovered, thereby permitting interaction of the substrate with the active site while reducing electrolyte screening by the electrolyte on the substrate; and
a fluidic gate region to which the active site of the enzyme is exposed.