US 12,345,659 B2
Method for measuring DIC defect shape on silicon wafer and polishing method
Kazuya Tomii, Shirakawa (JP)
Assigned to SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
Appl. No. 17/914,631
Filed by SHIN-ETSU HANDOTAI CO., LTD., Tokyo (JP)
PCT Filed Mar. 31, 2021, PCT No. PCT/JP2021/013755
§ 371(c)(1), (2) Date Sep. 26, 2022,
PCT Pub. No. WO2021/205950, PCT Pub. Date Oct. 14, 2021.
Claims priority of application No. 2020-069746 (JP), filed on Apr. 8, 2020.
Prior Publication US 2023/0125000 A1, Apr. 20, 2023
Int. Cl. G01N 21/95 (2006.01); G01N 21/94 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01)
CPC G01N 21/9505 (2013.01) [G01N 21/94 (2013.01); H01L 21/67288 (2013.01); H01L 21/02024 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A method for measuring a DIC defect shape on a silicon wafer, comprising steps of:
detecting a DIC defect on a main surface of the silicon wafer with a particle counter;
transferring position coordinates of the detected DIC defect from the particle counter to a phase-shifting interferometer; and
positioning the phase-shifting interferometer based on the transferred position coordinates to measure a shape including at least a height or depth of the detected DIC defect, wherein
a width of the DIC defect is on the order of tens of micrometers to hundreds of micrometers.