US 12,345,571 B2
Microelectromechanical infrared sensing device and fabrication method thereof
Chin-Jou Kuo, Tainan (TW); Bor-Shiun Lee, New Taipei (TW); and Ming-Fa Chen, Taoyuan (TW)
Assigned to INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed by INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Hsinchu (TW)
Filed on Apr. 26, 2022, as Appl. No. 17/729,873.
Claims priority of provisional application 63/230,471, filed on Aug. 6, 2021.
Claims priority of application No. 111102107 (TW), filed on Jan. 19, 2022.
Prior Publication US 2023/0045432 A1, Feb. 9, 2023
Int. Cl. G01J 5/08 (2022.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); G01J 5/02 (2022.01); G01J 5/20 (2006.01)
CPC G01J 5/0815 (2013.01) [B81B 3/0021 (2013.01); B81C 1/00476 (2013.01); G01J 5/0205 (2013.01); G01J 5/0225 (2013.01); G01J 5/20 (2013.01); B81B 2201/0278 (2013.01); B81B 2203/04 (2013.01); B81C 2201/0105 (2013.01); B81C 2201/0125 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A microelectromechanical (MEMS) infrared sensing device, comprising a substrate and an infrared sensing component provided above the substrate, and the infrared sensing component comprising:
a sensing plate, comprising at least one infrared absorbing layer, an infrared sensing layer, a sensing electrode and a plurality of metallic elements, wherein the sensing plate has a plurality of openings, the metallic elements respectively surround the openings, the sensing electrode is connected with the infrared sensing layer, and the metallic elements are spaced apart from one another parallel to the substrate; and
at least one supporting element connecting the sensing plate with the substrate.