| CPC G01B 11/303 (2013.01) [G01B 11/065 (2013.01); G01N 21/211 (2013.01); G01N 21/956 (2013.01)] | 20 Claims |
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1. A method of fabricating a semiconductor device, the method comprising:
generating a polarized light and illuminating the polarized light to a measurement target;
generating a pupil image of the measurement target from the polarized light reflected from the measurement target, the pupil image including polarization information on a plurality of incident angles and a plurality of azimuths in a manner of one-shot;
generating a self-interference image, using the pupil image;
analyzing the self-interference image to measure the measurement target; and
performing a semiconductor process on the measurement target depending on a result of the analyzing of the self-interference image,
wherein the generating of the self-interference image includes:
splitting an incident beam of the pupil image into a first component beam and a second component beam to generate multiple beams and shifting one of the first component beam and the second component beam in a first direction from a traveling direction of the incident beam, and
receiving the first component beam and the second component beam splitted from the incident beam of the pupil image and shifting the other of the first component beam and the second component beam in a second direction from the traveling direction of the incident beam, the second direction being different from the first direction,
making the first component beam and the second component beam interfere with each other,
wherein the first direction is one of a horizontal direction and a vertical direction which are perpendicular to the traveling direction of the incident beam, and
wherein the second direction is the other of the horizontal direction and the vertical direction.
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