US 12,344,945 B2
Transparent electrode for oxygen production, method for producing same, tandem water decomposition reaction electrode provided with same, and oxygen production device using same
Hiroshi Nishiyama, Bunkyo-ku (JP); Tomohiro Higashi, Bunkyo-ku (JP); Yutaka Sasaki, Bunkyo-ku (JP); Taro Yamada, Bunkyo-ku (JP); Kazunari Domen, Bunkyo-ku (JP); Yohichi Suzuki, Tsukuba (JP); and Seiji Akiyama, Chiyoda-ku (JP)
Assigned to Mitsubishi Chemical Corporation, Chiyoda-ku (JP); THE UNIVERSITY OF TOKYO, Bunkyo-ku (JP); JAPAN TECHNOLOGICAL RESEARCH ASSOCIATION OF ARTIFICIAL PHOTOSYNTHETIC CHEMICAL PROCESS, Bunkyo-ku (JP); and NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Chiyoda-ku (JP)
Filed by Mitsubishi Chemical Corporation, Chiyoda-ku (JP); THE UNIVERSITY OF TOKYO, Bunkyo-ku (JP); JAPAN TECHNOLOGICAL RESEARCH ASSOCIATION OF ARTIFICIAL PHOTOSYNTHETIC CHEMICAL PROCESS, Chiyoda-ku (JP); and NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Chiyoda-ku (JP)
Filed on Dec. 7, 2021, as Appl. No. 17/544,166.
Application 17/544,166 is a division of application No. 16/784,678, filed on Feb. 7, 2020, granted, now 11,248,304.
Application 16/784,678 is a continuation of application No. PCT/JP2018/029981, filed on Aug. 9, 2018.
Claims priority of application No. 2017-154524 (JP), filed on Aug. 9, 2017.
Prior Publication US 2022/0090278 A1, Mar. 24, 2022
Int. Cl. C25B 11/075 (2021.01); B01J 37/02 (2006.01); C01B 13/02 (2006.01); C01B 21/06 (2006.01); C25B 1/04 (2021.01); C25B 9/17 (2021.01); C25B 11/053 (2021.01); C25B 11/057 (2021.01); C25B 11/067 (2021.01)
CPC C25B 11/075 (2021.01) [B01J 37/0215 (2013.01); C01B 13/0207 (2013.01); C01B 21/0617 (2013.01); C25B 1/04 (2013.01); C25B 9/17 (2021.01); C25B 11/053 (2021.01); C25B 11/057 (2021.01); C25B 11/067 (2021.01); C01P 2006/40 (2013.01); C01P 2006/60 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A transparent electrode, comprising:
a transparent substrate;
a nitride semiconductor layer on the transparent substrate; and
a Ta nitride layer on the nitride semiconductor layer, wherein
the transparent electrode has a light transmittance of 80% or more at wavelength of 600 nm to 900 nm and a photocurrent density of 3 mA/cm2 or more at 1.23 VRHE under AM1.5G irradiation.