US 12,344,787 B2
Quantum dot light-emitting structure and manufacturing method thereof, and display apparatus
Wenhai Mei, Beijing (CN)
Assigned to BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD., Beijing (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/628,594
Filed by BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Apr. 15, 2021, PCT No. PCT/CN2021/087460
§ 371(c)(1), (2) Date Jan. 20, 2022,
PCT Pub. No. WO2021/238487, PCT Pub. Date Dec. 2, 2021.
Claims priority of application No. 202010459926.2 (CN), filed on May 27, 2020.
Prior Publication US 2022/0251446 A1, Aug. 11, 2022
Int. Cl. C09K 11/88 (2006.01); C09K 11/56 (2006.01); G03F 7/004 (2006.01); G03F 7/32 (2006.01); G03F 7/34 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H10K 50/115 (2023.01); H10K 71/00 (2023.01)
CPC C09K 11/883 (2013.01) [C09K 11/565 (2013.01); G03F 7/0045 (2013.01); G03F 7/325 (2013.01); G03F 7/34 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H10K 50/115 (2023.02); H10K 71/00 (2023.02)] 18 Claims
OG exemplary drawing
 
1. A manufacturing method of a quantum dot light-emitting structure, comprising:
providing first quantum dot solution, the first quantum dot solution comprising a first quantum dot which surface is modified with a first ligand and a photo-ligand remover, and the first ligand being dissolved in a first rinsing solvent;
coating the first quantum dot solution on a base substrate to form a first quantum dot light-emitting material layer;
partially exposing the first quantum dot light-emitting material layer, so that the first quantum dot light-emitting material layer comprises an exposed portion and an unexposed portion, the photo-ligand remover being configured to release a ligand remover under irradiation, to remove the first ligand in the exposed portion of the first quantum dot light-emitting material layer; and
developing and rinsing the exposed first quantum dot light-emitting material layer by using the first rinsing solvent, to form the first quantum dot light-emitting layer,
the method further comprises: providing second quantum dot solution, the second quantum dot solution comprising a second quantum dot which surface is modified with a second ligand and a photo-ligand remover, and the second ligand being dissolved in a second rinsing solvent;
coating the second quantum dot solution on a base substrate on which the first quantum dot light-emitting layer is formed to form a second quantum dot light-emitting material layer;
partially exposing the second quantum dot light-emitting material layer, so that the second quantum dot light-emitting material layer comprises an exposed portion and an unexposed portion, the photo-ligand remover being configured to release a ligand remover under irradiation, to remove the second ligand in the exposed portion of the second quantum dot light-emitting material layer; and
developing and rinsing the exposed second quantum dot light-emitting material layer by using the second rinsing solvent, to form the second quantum dot light-emitting layer,
wherein a first ligand content of the first quantum dot light-emitting layer is less than 60% of a second ligand content of the second content dot light-emitting layer, the first quantum dot light-emitting layer is configured to emit light with a wavelength ranging from 455 to 492 nanometers, and the second quantum dot light-emitting layer is configured to emit light with a wavelength ranging from 622 to 770 nanometers or light with a wavelength ranging from 492 to 577 nanometers.