US 12,343,823 B2
Digitized variable-polarity welding power source based on SiC IGBT
Zhenmin Wang, Guangdong (CN); Junhao Wei, Guangdong (CN); and Jianwen Wu, Guangdong (CN)
Assigned to SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangdong (CN)
Filed by South China University of Technology, Guangdong (CN)
Filed on Jan. 29, 2022, as Appl. No. 17/588,231.
Application 17/588,231 is a continuation of application No. PCT/CN2018/074686, filed on Jan. 31, 2018.
Claims priority of application No. 201711234792.9 (CN), filed on Nov. 30, 2017.
Prior Publication US 2022/0152719 A1, May 19, 2022
Int. Cl. B23K 9/073 (2006.01); H02M 1/00 (2006.01); H02M 1/32 (2007.01); H02M 3/335 (2006.01)
CPC B23K 9/073 (2013.01) [H02M 1/007 (2021.05); H02M 1/32 (2013.01); H02M 3/33573 (2021.05)] 10 Claims
OG exemplary drawing
 
1. A digital variable-polarity welding power source based on SiC IGBT (Silicon Carbide Insulated Gate Bipolar Transistor), comprising a main circuit and a control circuit, wherein:
the main circuit comprises a three-phase rectifying and filtering circuit, a SiC IGBT primary inverter circuit, a high-frequency transformer, a SiC ultra-high-frequency rectifying and filtering output circuit, a SiC IGBT secondary inverter circuit and a high-voltage arc stabilization circuit connected in sequence, wherein the three-phase rectifying and filtering circuit is connected to a three-phase AC power supply, and the high-voltage arc stabilization circuit is connected to a load; and
the control circuit comprises a controller and a power supply control module, and a digital panel, a SiC primary inverter drive module, and a SiC secondary inverter drive module connected in signal respectively to the controller; the digital panel, the SiC primary inverter drive module, and the SiC secondary inverter drive module are electrically connected respectively to the power supply control module; the SiC primary inverter drive module is also connected to the SiC IGBT primary inverter circuit; and the SiC secondary inverter drive module is also connected with the SiC IGBT secondary inverter circuit.