US 12,343,711 B2
Semiconductor material based on metal nanowires and porous nitride and preparation method thereof
Lixia Zhao, Beijing (CN); Jing Li, Beijing (CN); Chao Yang, Beijing (CN); Zhiguo Yu, Beijing (CN); Xin Xi, Beijing (CN); and Kaiyou Wang, Beijing (CN)
Assigned to INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
Appl. No. 17/256,762
Filed by INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES, Beijing (CN)
PCT Filed Oct. 18, 2018, PCT No. PCT/CN2018/110866
§ 371(c)(1), (2) Date May 5, 2021,
PCT Pub. No. WO2020/006928, PCT Pub. Date Jan. 9, 2020.
Claims priority of application No. 201810722928.9 (CN), filed on Jul. 4, 2018.
Prior Publication US 2022/0088579 A1, Mar. 24, 2022
Int. Cl. B82Y 30/00 (2011.01); B01J 21/02 (2006.01); B01J 23/50 (2006.01); B01J 23/52 (2006.01); B01J 27/24 (2006.01); B01J 35/23 (2024.01); B01J 35/33 (2024.01); B01J 35/39 (2024.01); B01J 37/02 (2006.01); B01J 37/34 (2006.01); C01B 3/04 (2006.01); C23C 16/30 (2006.01); C23C 28/00 (2006.01); C25D 7/12 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H10F 71/00 (2025.01); H10F 77/124 (2025.01); H10F 77/40 (2025.01); H10H 20/01 (2025.01); H10H 20/825 (2025.01); H10H 20/855 (2025.01); B82Y 15/00 (2011.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01); C25D 3/44 (2006.01); C25D 3/46 (2006.01); C25D 3/48 (2006.01)
CPC B01J 27/24 (2013.01) [B01J 21/02 (2013.01); B01J 23/50 (2013.01); B01J 23/52 (2013.01); B01J 35/23 (2024.01); B01J 35/33 (2024.01); B01J 35/39 (2024.01); B01J 37/0207 (2013.01); B01J 37/0215 (2013.01); B01J 37/0242 (2013.01); B01J 37/348 (2013.01); C01B 3/042 (2013.01); C23C 16/303 (2013.01); C23C 28/32 (2013.01); C23C 28/34 (2013.01); C25D 7/12 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H10F 71/1274 (2025.01); H10F 77/12485 (2025.01); H10F 77/413 (2025.01); H10H 20/0137 (2025.01); H10H 20/825 (2025.01); H10H 20/855 (2025.01); B82Y 15/00 (2013.01); B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C25D 3/44 (2013.01); C25D 3/46 (2013.01); C25D 3/48 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor material based on metal nanowires and porous nitride, comprising:
a substrate;
a buffer layer formed on the substrate;
a composite material layer formed on the buffer layer, comprising:
a transverse porous nitride template layer; and
a plurality of metal nanowires filled in pores of the transverse porous nitride template layer,
wherein the transverse porous nitride template layer is n-type doped, and is configured to: provide an electrochemical path for the synthesis of metal nanowires and serve as a working electrode;
wherein a direction in which the nanowires extend is parallel to a surface of the substrate facing the composite material layer;
wherein a preparing material of the transverse porous nitride template layer is GaN, a preparing material of the metal nanowires is Ag, and a transverse porous GaN layer and Ag nanowires are combined to form the composite material layer, wherein diameters of the pores in a transverse porous GaN layer are 40 nm, lengths of the pores are 150 μm, and diameters of Ag nanowires are 40 nm; and
wherein the semiconductor material based on the Ag nanowires and the transverse porous GaN layer has a light absorptivity greater than 50% and less than 70% in a wavelength range from 400 nm to 800 nm.