US 12,021,128 B2
Bidirectional power device and method for manufacturing the same
Shaohua Zhang, Hangzhou (CN)
Assigned to HANGZHOU SILAN MICROELECTRONICS CO., LTD., Hangzhou (CN)
Appl. No. 17/600,758
Filed by HANGZHOU SILAN MICROELECTRONICS CO., LTD., Hangzhou (CN)
PCT Filed Jan. 7, 2020, PCT No. PCT/CN2020/070770
§ 371(c)(1), (2) Date Oct. 1, 2021,
PCT Pub. No. WO2020/199707, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 201910268168.3 (CN), filed on Apr. 3, 2019.
Prior Publication US 2022/0199794 A1, Jun. 23, 2022
Int. Cl. H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 29/0611 (2013.01); H01L 29/1041 (2013.01); H01L 29/407 (2013.01); H01L 29/66621 (2013.01); H01L 29/7834 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A bidirectional power device, comprising:
a semiconductor layer;
a plurality of trenches located in the semiconductor layer;
a gate dielectric layer located on an inner wall of each of the plurality of trenches;
a control gate located at a lower portion of each of the plurality of trenches;
a shield gate located at an upper portion of each of the plurality of trenches;
an isolation layer located between the control gate and the shield gate;
a source region and a drain region which are located in the semiconductor layer and are adjacent to the shield gate;
a first contact, being in contact with the source region to form a first output electrode;
a second contact, being in contact with the drain region to form a second output electrode;
a third contact, being in contact with the semiconductor layer to form a substrate electrode; and
a fourth contact, being in contact with the control gate and/or the shield gate to form a gate electrode,
wherein the control gate is isolated from the semiconductor layer by the gate dielectric layer.