CPC H01L 29/4236 (2013.01) [H01L 29/0611 (2013.01); H01L 29/1041 (2013.01); H01L 29/407 (2013.01); H01L 29/66621 (2013.01); H01L 29/7834 (2013.01)] | 22 Claims |
1. A bidirectional power device, comprising:
a semiconductor layer;
a plurality of trenches located in the semiconductor layer;
a gate dielectric layer located on an inner wall of each of the plurality of trenches;
a control gate located at a lower portion of each of the plurality of trenches;
a shield gate located at an upper portion of each of the plurality of trenches;
an isolation layer located between the control gate and the shield gate;
a source region and a drain region which are located in the semiconductor layer and are adjacent to the shield gate;
a first contact, being in contact with the source region to form a first output electrode;
a second contact, being in contact with the drain region to form a second output electrode;
a third contact, being in contact with the semiconductor layer to form a substrate electrode; and
a fourth contact, being in contact with the control gate and/or the shield gate to form a gate electrode,
wherein the control gate is isolated from the semiconductor layer by the gate dielectric layer.
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