	US 12,021,091 B2
	Method of manufacturing an array substrate wherein static electricity is discharged from an oxide semiconductor film
Bin Lin, Beijing (CN); Yong Zeng, Beijing (CN); Yazhou Huo, Beijing (CN); Liangliang Li, Beijing (CN); and Zhouyu Chen, Beijing (CN)
Assigned to FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Fujian (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
Appl. No. 17/298,493
Filed by Fuzhou BOE Optoelectronics Technology Co., Ltd., Fujian (CN); and BOE TECHNOLOGY GROUP CO., LTD., Beijing (CN)
PCT Filed Sep. 25, 2020, PCT No. PCT/CN2020/117632 § 371(c)(1), (2) Date May 28, 2021, PCT Pub. No. WO2021/057883, PCT Pub. Date Apr. 1, 2021.
Claims priority of application No. 201910913692.1 (CN), filed on Sep. 25, 2019.
Prior Publication US 2022/0028901 A1, Jan. 27, 2022 Prior Publication US 2022/0278134 A2, Sep. 1, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 27/02 (2006.01); H10K 59/12 (2023.01); H10K 59/131 (2023.01); G02F 1/1362 (2006.01)

CPC H01L 27/127 (2013.01) [H01L 27/0288 (2013.01); H01L 27/124 (2013.01); H10K 59/1201 (2023.02); G02F 1/136204 (2013.01); H01L 27/1225 (2013.01); H10K 59/1315 (2023.02)]

8 Claims

1. A method of manufacturing an array substrate, comprising:

providing a base;

forming a plurality of conductive lines on the base;

forming an oxide semiconductor film on a side of the plurality of conductive lines away from the base, the oxide semiconductor film covering the plurality of conductive lines and being in direct contact with at least one conductive line, and the at least one conductive line being configured to discharge static electricity generated in the oxide semiconductor film; and

patterning the oxide semiconductor film by using a photoetching process to remove a portion of the oxide semiconductor film that is in direct contact with the at least one conductive line, and form an oxide semiconductor layer including active layers of a plurality of oxide thin film transistors, the oxide semiconductor layer and the at least one conductive line being insulated from each other.