CPC H01L 23/5389 (2013.01) [H01L 22/32 (2013.01); H01L 23/488 (2013.01); H01L 23/49838 (2013.01); H01L 23/522 (2013.01); H01L 23/5283 (2013.01); H01L 23/58 (2013.01); H01L 24/19 (2013.01); H01L 24/20 (2013.01); H01L 24/24 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 25/18 (2013.01); H01L 22/34 (2013.01); H01L 24/06 (2013.01)] | 15 Claims |
1. A die structure comprising:
a semiconductor substrate;
a first front-end-of-the line (FEOL) die area of a first die patterned into the semiconductor substrate, the first FEOL die area including a first input/output circuit region;
a back-end-of-the-line (BEOL) build-up structure spanning over the first FEOL die area, wherein the BEOL build-up structure further comprises a first metallic seal adjacent to the first input/output circuit region; and
a die edge adjacent to the first input/output circuit region;
wherein the BEOL build-up structure comprises a die-to-die routing connected between the first input/output circuit region and a terminal end of die-to-die routing at the die edge, and the die-to-die routing extends through first openings in the first metallic seal.
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