each device within the array of devices being specified by a location (i,j) within the array of devices, wherein i is a row index ranging from 1 to N, and j is a column index ranging from 1 to M, wherein M is a positive integer greater than or equal to 2 and N is a positive integer;

each device including a Vdd terminal and a Vss terminal, wherein the Vdd terminal has a higher potential than the Vss terminal;

at least a first plurality of the devices in the array of devices, where each device in the first plurality of the devices further including at least one input terminal and at least one output terminal and Zmax number of V_Ter_z terminals, where z is an index ranging from 1 to Zmax, where Zmax is a positive integer;

wherein when N is greater than or equal to 2, then for at least a first majority of the devices in the array of devices, the Vss terminal of the device at location (i,j), for i=2:N, j=1:M, is connected to the Vdd terminal of the device at location (i−1,j), resulting in a potential difference between the Vdd terminal and the Vss terminal of at least the first majority of the devices in the array of devices to be a substantially same voltage VDD;

wherein for at least a second majority of the devices in the array of devices, the potential of the Vss terminal of each device at any location (i,j+1) of the array of devices is generated to be higher than the potential of the Vss terminal for another device at location (i,j) by a voltage X_j, for i=1:N, j=1:(M−1); and

wherein VDD is substantially same as a potential difference between the Vdd terminal and the Vss terminal of at least one device of the first plurality of the devices in the array of devices, and a sum of all X_j voltages for j=1:(M−1) is greater than or substantially same as VDD/2.