	US 12,020,925 B2
	Methods for preparing AlN based template having Si substrate and GaN based epitaxial structure having Si substrate
Zhihong Liu, Xi'an (CN); Junwei Liu, Xi'an (CN); Jincheng Zhang, Xi'an (CN); Lu Hao, Xi'an (CN); Kunlu Song, Xi'an (CN); Hong Zhou, Xi'an (CN); Shenglei Zhao, Xi'an (CN); Yachao Zhang, Xi'an (CN); Weihang Zhang, Xi'an (CN); and Yue Hao, Xi'an (CN)
Assigned to Xidian University, Xi'an (CN)
Appl. No. 17/275,774
Filed by Xidian University, Xi'an (CN)
PCT Filed Feb. 8, 2021, PCT No. PCT/CN2021/075952 § 371(c)(1), (2) Date Mar. 12, 2021, PCT Pub. No. WO2021/218281, PCT Pub. Date Nov. 4, 2021.
Claims priority of application No. 202010361191.X (CN), filed on Apr. 30, 2020.
Prior Publication US 2022/0108885 A1, Apr. 7, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01)

CPC H01L 21/02458 (2013.01) [H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/0254 (2013.01)]

12 Claims

1. A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising:

providing the Si substrate;

growing an AlN nucleation layer on the Si substrate;

introducing an ion passing through the AlN nucleation layer and into the Si substrate; and

introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate;

wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (μm) to 1500 μm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.