CPC H01L 21/02458 (2013.01) [H01L 21/02271 (2013.01); H01L 21/02381 (2013.01); H01L 21/0254 (2013.01)] | 12 Claims |
1. A method for preparing an aluminum nitride (AlN) based template having a silicon (Si) substrate, comprising:
providing the Si substrate;
growing an AlN nucleation layer on the Si substrate;
introducing an ion passing through the AlN nucleation layer and into the Si substrate; and
introducing another ion into the AlN nucleation layer, before or after introducing the ion passing through the AlN nucleation layer and into the Si substrate;
wherein a resistivity of the Si substrate is in a range from 0.01 Ω·cm to 10000 Ω·cm, a thickness of the Si substrate is in a range from 100 micrometers (μm) to 1500 μm, and a thickness of the AlN nucleation layer is in a range from 10 nanometers (nm) to 500 nm.
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