	US 12,020,911 B2
	Chucking process and system for substrate processing chambers
Bhaskar Kumar, San Jose, CA (US); Ganesh Balasubramanian, Fremont, CA (US); Vivek Bharat Shah, Santa Clara, CA (US); and Jiheng Zhao, Santa Clara, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 27, 2022, as Appl. No. 17/975,452.
Application 17/975,452 is a continuation of application No. 16/803,479, filed on Feb. 27, 2020, granted, now 11,488,811.
Claims priority of provisional application 62/815,674, filed on Mar. 8, 2019.
Prior Publication US 2023/0048661 A1, Feb. 16, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01J 37/32 (2006.01); C23C 16/458 (2006.01); C23C 16/50 (2006.01); C23C 16/52 (2006.01)

CPC H01J 37/32715 (2013.01) [C23C 16/4583 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/321 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/3321 (2013.01)]

20 Claims

1. A method of chucking substrates in a substrate processing chamber, comprising:

while a first substrate is disposed on a support surface of a pedestal:

applying a first value of a chucking voltage to the pedestal;

ramping the chucking voltage from the first value;

detecting an impedance shift while ramping the chucking voltage;

determining a corresponding second value of the chucking voltage at which the impedance shift occurs; and

determining a third value of the chucking voltage based on the impedance shift and the corresponding second value of the chucking voltage; and

while a second substrate is disposed on the support surface of the pedestal, applying the third value of the chucking voltage to the pedestal.