CPC H01J 37/32715 (2013.01) [C23C 16/4583 (2013.01); C23C 16/50 (2013.01); C23C 16/52 (2013.01); H01J 37/321 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/24564 (2013.01); H01J 2237/3321 (2013.01)] | 20 Claims |
1. A method of chucking substrates in a substrate processing chamber, comprising:
while a first substrate is disposed on a support surface of a pedestal:
applying a first value of a chucking voltage to the pedestal;
ramping the chucking voltage from the first value;
detecting an impedance shift while ramping the chucking voltage;
determining a corresponding second value of the chucking voltage at which the impedance shift occurs; and
determining a third value of the chucking voltage based on the impedance shift and the corresponding second value of the chucking voltage; and
while a second substrate is disposed on the support surface of the pedestal, applying the third value of the chucking voltage to the pedestal.
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