US 12,019,375 B2
Photosensitive material and method of lithography
An-Ren Zi, Hsinchu (TW); Ching-Yu Chang, Yilang County (TW); and Chien-Wei Wang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Dec. 9, 2019, as Appl. No. 16/707,448.
Application 16/707,448 is a division of application No. 15/150,171, filed on May 9, 2016, granted, now 10,503,070.
Claims priority of provisional application 62/265,869, filed on Dec. 10, 2015.
Prior Publication US 2020/0110338 A1, Apr. 9, 2020
Int. Cl. G03F 7/20 (2006.01); G03F 7/004 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/16 (2006.01); G03F 7/32 (2006.01); H01L 21/027 (2006.01)
CPC G03F 7/20 (2013.01) [G03F 7/0042 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/32 (2013.01); H01L 21/0271 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of semiconductor device fabrication, wherein the method comprises:
forming a first additive layer on a target substrate, wherein the first additive layer includes a sensitizer additive component including a metal and a floating additive component;
after the forming of the first additive layer, forming a photoresist layer including an acid generator to on the first additive layer;
floating the floating additive component over the sensitizer additive component to form a floating additive layer; and
exposing the target substrate having the first additive layer and the photoresist layer disposed thereon using a radiation,
wherein upon the exposing of the target substrate, the sensitizer additive component of the first additive layer absorbs the radiation and generates a secondary electron,
wherein the acid generator of the photoresist layer generates an acid using energy of the secondary electron,
wherein the sensitizer additive component is an isolated molecule not attached to a polymer chain.