CPC G03F 7/20 (2013.01) [G03F 7/0042 (2013.01); G03F 7/091 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/32 (2013.01); H01L 21/0271 (2013.01)] | 20 Claims |
1. A method of semiconductor device fabrication, wherein the method comprises:
forming a first additive layer on a target substrate, wherein the first additive layer includes a sensitizer additive component including a metal and a floating additive component;
after the forming of the first additive layer, forming a photoresist layer including an acid generator to on the first additive layer;
floating the floating additive component over the sensitizer additive component to form a floating additive layer; and
exposing the target substrate having the first additive layer and the photoresist layer disposed thereon using a radiation,
wherein upon the exposing of the target substrate, the sensitizer additive component of the first additive layer absorbs the radiation and generates a secondary electron,
wherein the acid generator of the photoresist layer generates an acid using energy of the secondary electron,
wherein the sensitizer additive component is an isolated molecule not attached to a polymer chain.
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