US 12,019,366 B2
Reflective mask blank, reflective mask, and method for manufacturing reflective mask and semiconductor device
Masanori Nakagawa, Tokyo (JP); and Tsutomu Shoki, Tokyo (JP)
Assigned to HOYA CORPORATION, Tokyo (JP)
Appl. No. 17/603,529
Filed by HOYA CORPORATION, Tokyo (JP)
PCT Filed Jun. 18, 2020, PCT No. PCT/JP2020/023948
§ 371(c)(1), (2) Date Oct. 13, 2021,
PCT Pub. No. WO2020/256062, PCT Pub. Date Dec. 24, 2020.
Claims priority of application No. 2019-114769 (JP), filed on Jun. 20, 2019.
Prior Publication US 2022/0206379 A1, Jun. 30, 2022
Int. Cl. G03F 1/24 (2012.01); G03F 1/46 (2012.01)
CPC G03F 1/24 (2013.01) [G03F 1/46 (2013.01)] 19 Claims
 
1. A reflective mask blank comprising: a substrate; a multilayer reflective film on the substrate; and an absorber film on the multilayer reflective film, wherein
the absorber film comprises an absorption layer and a reflectance adjustment layer,
the absorption layer comprises tantalum (Ta), boron (B), nitrogen (N), and at least one additive element selected from hydrogen (H) and deuterium (D),
a content of the boron (B) in the absorption layer is more than 5 atomic %, and
a total content of the at least one additive element in the absorption layer is 0.1 atomic % or more and 30 atomic % or less.