| CPC G01R 31/2608 (2013.01) [G01R 19/0038 (2013.01)] | 20 Claims |
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1. A gate detection circuit of an insulated gate bipolar transistor, wherein the gate detection circuit comprises:
a pulse shaping circuit, configured for shaping an input signal of a signal input device, and
outputting a first square wave signal of a high level and a second square wave signal of a low level when the input signal is at the high level; and
outputting a first square wave signal of the low level and a second square wave signal of the high level when the input signal is at the low level;
a comparison circuit, configured for:
comparing a first preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the first square wave signal is at the high level, and outputting a low level when the first preset voltage is greater than the voltage of the gate of the insulated gate bipolar transistor; and
comparing a second preset voltage with a voltage of a gate of the insulated gate bipolar transistor when the second square wave signal is at the high level, and outputting a low level when the second preset voltage is lower than the voltage of the gate of the insulated gate bipolar transistor; and
a fault output circuit, configured for outputting a gate fault signal when the comparison circuit outputs the low level.
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