CPC G01N 27/20 (2013.01) [G01N 27/041 (2013.01); G06F 17/15 (2013.01)] | 20 Claims |
1. A defect detection method for a semi-conducting bedding layer of a power cable, comprising:
obtaining a length parameter, a corrugation pitch parameter, radius parameters, and a thickness parameter of a power cable, wherein the power cable comprises a shield, a corrugated sheath, and a semi-conducting bedding layer between the shield and the corrugated sheath;
obtaining a first resistance value between the shield and the corrugated sheath, and calculating a second resistance value of the shield based on the length parameter and the corrugation pitch parameter;
calculating a radial resistance value of the semi-conducting bedding layer based on the first resistance value and the second resistance value;
determining a contact angle of a critical point of contact between the corrugated sheath and the semi-conducting bedding layer based on the radius parameters and the thickness parameter;
taking a plurality of points on a contact surface between the semi-conducting bedding layer and the corrugated sheath as base interpolation points;
taking an average value of the base interpolation points to obtain an interpolation data point;
obtaining coordinates of the interpolation data point, and constructing an interpolation function based on coordinates of a plurality of interpolation data points;
calculating first volume resistivity of the semi-conducting bedding layer in a resistance approximation mode based on the interpolation function, the radial resistance value, and the contact angle;
calculating second volume resistivity of the semi-conducting bedding layer in a conductance approximation mode based on the interpolation function, the radial resistance value, and the contact angle; and
determining total volume resistivity of the semi-conducting bedding layer based on the first volume resistivity and the second volume resistivity, and comparing the total volume resistivity with a preset evaluation parameter to obtain a defect detection result of the semi-conducting bedding layer.
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