US 12,019,044 B2
Defect detection method, apparatus, and device for semi-conducting bedding layer of power cable
Shengchen Fang, Tianjin (CN); Pengxian Song, Tianjin (CN); Xu Li, Tianjin (CN); Yang Yu, Tianjin (CN); Mingzheng Zhu, Tianjin (CN); Zhengzheng Meng, Tianjin (CN); Fengzheng Zhou, Tianjin (CN); Xiaohui Zhu, Tianjin (CN); Lei Yang, Tianjin (CN); Jun Zhang, Tianjin (CN); Chun He, Tianjin (CN); Nan Wang, Tianjin (CN); Ke Xu, Tianjin (CN); Qinghua Tang, Tianjin (CN); Chi Zhang, Tianjin (CN); Haoming Wang, Tianjin (CN); Longji Li, Tianjin (CN); Cheng Sun, Tianjin (CN); and Wei Fan, Tianjin (CN)
Assigned to Electric Power Science & Research Institute of State Grid Tianjin Electric Power Company, Tianjin (CN); and State Grid Tianjin Electric Power Company, Tianjin (CN)
Appl. No. 17/776,221
Filed by Electric Power Science & Research Institute of State Grid Tianjin Electric Power Company, Tianjin (CN); and State Grid Tianjin Electric Power Company, Tianjin (CN)
PCT Filed Jan. 21, 2022, PCT No. PCT/CN2022/073086
§ 371(c)(1), (2) Date May 11, 2022,
PCT Pub. No. WO2023/050659, PCT Pub. Date Apr. 6, 2023.
Claims priority of application No. 202111148373.X (CN), filed on Sep. 29, 2021.
Prior Publication US 2024/0175839 A1, May 30, 2024
Int. Cl. G01N 27/20 (2006.01); G01N 27/04 (2006.01); G06F 17/15 (2006.01)
CPC G01N 27/20 (2013.01) [G01N 27/041 (2013.01); G06F 17/15 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A defect detection method for a semi-conducting bedding layer of a power cable, comprising:
obtaining a length parameter, a corrugation pitch parameter, radius parameters, and a thickness parameter of a power cable, wherein the power cable comprises a shield, a corrugated sheath, and a semi-conducting bedding layer between the shield and the corrugated sheath;
obtaining a first resistance value between the shield and the corrugated sheath, and calculating a second resistance value of the shield based on the length parameter and the corrugation pitch parameter;
calculating a radial resistance value of the semi-conducting bedding layer based on the first resistance value and the second resistance value;
determining a contact angle of a critical point of contact between the corrugated sheath and the semi-conducting bedding layer based on the radius parameters and the thickness parameter;
taking a plurality of points on a contact surface between the semi-conducting bedding layer and the corrugated sheath as base interpolation points;
taking an average value of the base interpolation points to obtain an interpolation data point;
obtaining coordinates of the interpolation data point, and constructing an interpolation function based on coordinates of a plurality of interpolation data points;
calculating first volume resistivity of the semi-conducting bedding layer in a resistance approximation mode based on the interpolation function, the radial resistance value, and the contact angle;
calculating second volume resistivity of the semi-conducting bedding layer in a conductance approximation mode based on the interpolation function, the radial resistance value, and the contact angle; and
determining total volume resistivity of the semi-conducting bedding layer based on the first volume resistivity and the second volume resistivity, and comparing the total volume resistivity with a preset evaluation parameter to obtain a defect detection result of the semi-conducting bedding layer.