US 12,018,372 B2
Gas injector for epitaxy and CVD chamber
Tetsuya Ishikawa, San Jose, CA (US); Swaminathan T. Srinivasan, Pleasanton, CA (US); Matthias Bauer, Sunnyvale, CA (US); Ala Moradian, Sunnyvale, CA (US); Manjunath Subbanna, Bangalore (IN); Kartik Bhupendra Shah, Saratoga, CA (US); Errol Antonio C. Sanchez, Tracy, CA (US); Sohrab Zokaei, Los Altos, CA (US); Michael R. Rice, Pleasanton, CA (US); and Peter Reimer, Los Altos, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on May 11, 2021, as Appl. No. 17/317,342.
Prior Publication US 2022/0364231 A1, Nov. 17, 2022
Int. Cl. C23C 16/40 (2006.01); B01J 4/00 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01)
CPC C23C 16/4558 (2013.01) [B01J 4/005 (2013.01); B01J 4/008 (2013.01); C23C 16/4412 (2013.01); C23C 16/45587 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A process chamber for substrate processing comprising:
an inject ring comprising one or more injector passages disposed through and on one half of the inject ring; and
one or more gas injectors, each of the one or more gas injectors disposed inside of one of the injector passages, each of the gas injectors comprising:
an injector insert;
a gas introduction passage;
a gas diffusion passage fluidly coupled to the gas introduction passage, the gas diffusion passage comprising:
a plurality of passage splits; and
a plurality of pathways;
a first plenum disposed at a distal end of the gas diffusion passage, the first plenum defining a single volume;
an outlet opening disposed through an inject surface of the injector insert opposite the gas introduction passage and in fluid communication with the gas diffusion passage; and
a fin array disposed between the first plenum and the outlet opening, the fin array, comprising:
a plurality of fins disposed between a bottom surface and a top surface of the injector insert, the plurality of fins distributed to form a plurality of pathway extensions.