| CPC B23H 5/06 (2013.01) [B23H 3/10 (2013.01); B24B 37/046 (2013.01); H01L 21/32125 (2013.01); B23H 2500/00 (2013.01)] | 16 Claims |
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1. An electrochemical mechanical polishing/planarization equipment for processing a conductive wafer substrate, comprising:
a power supply comprising a first lead and a second lead;
a polishing table connected to the first lead and having conductivity, wherein the polishing table comprises an upper polishing disc and a lower polishing disc, which are disposed concentrically and coaxially, and the lower polishing disc is connected to a central rotation shaft, and wherein the first lead passes through the central rotation shaft to be directly connected to the upper polishing disc of the polishing table;
a polishing pad disposed on an upper surface of the polishing table, wherein the polishing pad comprises at least an active layer in contact with a polishing surface of the conductive wafer substrate, the active layer is made of an insulating material, the active layer comprises holes penetrating through a thickness direction of the active layer, and an electrically conductive chemical liquid is accommodated in the holes, wherein a total area of the holes account for 5% to 70% of a total area of the active layer; and
a polishing head connected to the second lead and having conductivity, wherein a lower surface of the polishing head includes a suction component that directly clamps the conductive wafer substrate so that it is directly connected to a back of the polishing surface of the conductive wafer substrate, and wherein the second lead passes through another central rotation shaft located on a backside of the polishing head, and passes through the suction component to be electrically connected to the back of the polishing surface of the conductive wafer substrate,
wherein the first lead, the polishing table, the electrically conductive chemical liquid, the polishing surface of the conductive wafer substrate, the conductive wafer substrate, the back of the polishing surface of the conductive wafer substrate, the polishing head, and the second lead in sequence form a conductive loop to form an electrochemical reaction layer on the polishing surface of the conductive wafer substrate, and
wherein the polishing head drives the conductive wafer substrate to move relative to the polishing pad to perform a chemical mechanical polishing of the electrochemical reaction layer.
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