US RE50,471 E1
Semiconductor device and method for manufacturing the same
Daimotsu Kato, Kawasaki (JP); Toshiya Yonehara, Yamato (JP); Hiroshi Ono, Setagaya (JP); Yosuke Kajiwara, Yokohama (JP); Masahiko Kuraguchi, Yokohama (JP); and Tatsuo Shimizu, Shinagawa (JP)
Assigned to Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Feb. 28, 2022, as Appl. No. 17/682,427.
Application 17/682,427 is a reissue of application No. 16/297,776, filed on Mar. 11, 2019, granted, now 10,916,646, issued on Feb. 9, 2021.
Claims priority of application No. 2018-116257 (JP), filed on Jun. 19, 2018.
Int. Cl. H01L 29/778 (2006.01); H01L 21/285 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 64/27 (2025.01); H10D 64/66 (2025.01)
CPC H10D 30/475 (2025.01) [H01L 21/28575 (2013.01); H10D 30/015 (2025.01); H10D 64/513 (2025.01); H10D 64/667 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first electrode;
a second electrode;
a first semiconductor region including Alx2Ga1-x2N [ Alx1Ga1-x1N ] (0≤x1<1), the first semiconductor region including a first partial region, a second partial region, a third partial region between the first partial region and the second partial region, a fourth partial region between the first partial region and the third partial region, and a fifth partial region between the third partial region and the second partial region, a first direction from the first partial region toward the first electrode crossing a second direction, the second direction being from the first electrode toward the second electrode, a direction from the second partial region toward the second electrode being aligned with the first direction;
a second semiconductor region including Alx2Ga1-x2N (0<x2≤1 and x1<x2), the second semiconductor region including a sixth partial region and a seventh partial region, a direction from the fourth partial region toward the sixth partial region being aligned with the first direction, a direction from the fifth partial region toward the seventh partial region being aligned with the first direction;
a third electrode, a direction from the third partial region toward the third electrode being aligned with the first direction, the third electrode overlapping the sixth partial region and the seventh partial region in the second direction; and
a first insulating film including a portion provided between the third electrode and the third partial region, between the third electrode and the fourth partial region, between the third electrode and the fifth partial region, between the third electrode and the sixth partial region, and between the third electrode and the seventh partial region,
in an X-ray analysis measurement, a ratio of a second peak intensity to a first peak intensity being 1.5 or more, the first peak intensity corresponding to a (111) orientation of the third electrode, the second peak intensity corresponding to a (220) orientation of the third electrode.