US 12,342,736 B2
Phase-change memory cell with mixed-material switchable region
Matthew Joseph BrightSky, Armonk, NY (US); Cheng-Wei Cheng, White Plains, NY (US); Guy M. Cohen, Westchester, NY (US); Robert L. Bruce, White Plains, NY (US); Asit Ray, Baldwin, NY (US); and Wanki Kim, Chappaqua, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on Dec. 8, 2022, as Appl. No. 18/063,189.
Prior Publication US 2024/0196766 A1, Jun. 13, 2024
Int. Cl. H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/828 (2023.02) [H10N 70/231 (2023.02); H10N 70/8828 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first electrode;
a second electrode; and
a memory component configured to store a resistive state, the memory component including a layered region arranged in direct contact with the first electrode and a bulk region arranged in direct contact with the second electrode, wherein:
the layered region includes a plurality of first layers made of a first material and a plurality of second layers made of a second material alternatingly arranged with one another,
the first material is a phase-change material and the second material is a non-phase-change material,
the bulk region is a continuous mass made of a third material that is different than the first material and the second material, and
the bulk region is in direct contact with at least two of the first layers and at least one of the second layers of the layered region.