US 12,342,733 B1
Quantum dot devices with magnetic gates
Lester Lampert, Portland, OR (US); Guoji Zheng, Hillsboro, OR (US); Felix Frederic Leonhard Borjans, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); Hubert C. George, Portland, OR (US); Simon Schaal, Hillsboro, OR (US); Florian Luethi, Portland, OR (US); Thomas Francis Watson, Portland, OR (US); and Jeanette M. Roberts, North Plains, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Feb. 25, 2022, as Appl. No. 17/681,528.
Claims priority of provisional application 63/289,332, filed on Dec. 14, 2021.
Int. Cl. H10N 60/12 (2023.01); G06N 10/40 (2022.01); H10N 60/01 (2023.01); H10N 60/10 (2023.01); H10N 69/00 (2023.01)
CPC H10N 60/128 (2023.02) [G06N 10/40 (2022.01); H10N 60/01 (2023.02); H10N 60/11 (2023.02); H10N 69/00 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A quantum dot device, comprising:
a quantum well stack;
an insulating material over the quantum well stack;
a first gate, comprising a first opening in the insulating material, the first opening extending towards the quantum well stack and comprising a first magnetic material; and
a second gate, comprising a second opening in the insulating material, the second opening extending towards the quantum well stack and comprising a second magnetic material,
wherein a height of the first magnetic material in the first opening is different from a height of the second magnetic material in the second opening.