US 12,342,732 B2
Vertical silicon Josephson Junction device for qubit applications
Steven J. Holmes, Ossining, NY (US); Devendra K. Sadana, Pleasantville, NY (US); Oleg Gluschenkov, Tannersville, NY (US); and Stephen W. Bedell, Wappingers Falls, NY (US)
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Dec. 28, 2021, as Appl. No. 17/564,122.
Prior Publication US 2023/0210018 A1, Jun. 29, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H10N 60/12 (2023.01); G06N 10/00 (2022.01); H10N 60/01 (2023.01); H10N 60/80 (2023.01); H10N 60/85 (2023.01); H10N 69/00 (2023.01)
CPC H10N 60/12 (2023.02) [G06N 10/00 (2019.01); H10N 60/0912 (2023.02); H10N 60/805 (2023.02); H10N 60/85 (2023.02); H10N 69/00 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A vertical Josephson Junction device comprising:
a substrate comprising an epitaxial silicon;
a lower superconducting electrode comprising a superconducting region of the epitaxial silicon;
an upper superconducting electrode comprising a metallic superconductor; and
a junction layer, wherein:
a section of the junction layer between the lower and upper superconducting electrodes forms a junction of the vertical Josephson Junction device; and
the substrate, the lower superconducting electrode, and the junction layer have a same crystalline structure.