US 12,342,719 B2
Embedded thermoelectric cooler using thermally anisotropic mesas for power device heat generating source temperature reduction
Archana Venugopal, Mountain View, CA (US); and Jingjing Chen, San Jose, CA (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by Texas Instruments Incorporated, Dallas, TX (US)
Filed on Jun. 9, 2022, as Appl. No. 17/836,731.
Claims priority of provisional application 63/291,340, filed on Dec. 17, 2021.
Prior Publication US 2023/0200238 A1, Jun. 22, 2023
Int. Cl. H10N 10/13 (2023.01); H01L 23/38 (2006.01); H10N 10/17 (2023.01)
CPC H10N 10/13 (2023.02) [H01L 23/38 (2013.01); H10N 10/17 (2023.02)] 33 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a substrate;
an embedded thermoelectric cooler in the substrate, the embedded thermoelectric cooler including a cold terminal and a hot terminal, wherein the cold terminal includes first conductivity type thermopiles in a first doped region of the substrate and the hot terminal includes second conductivity type thermopiles in a second doped region of the substrate;
an array of thermally anisotropic mesas in the substrate between the cold terminal and the hot terminal, wherein the array of thermally anisotropic mesas is in a third doped region of the substrate, the third doped region being different from either the first doped region or the second doped region;
an interconnect system connecting the cold terminal to the hot terminal; and
a heat generating source located adjacent to the cold terminal of the embedded thermoelectric cooler.