US 12,342,679 B2
Light emitting diodes comprising field plates
Srinivasa Banna, San Jose, CA (US); Antonio Lopez-Julia, Aachen (DE); and Joseph Flemish, San Jose (CA)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on Sep. 20, 2022, as Appl. No. 17/949,071.
Claims priority of provisional application 63/246,477, filed on Sep. 21, 2021.
Prior Publication US 2023/0086869 A1, Mar. 23, 2023
Int. Cl. H10K 59/12 (2023.01); H10H 20/814 (2025.01); H10H 20/851 (2025.01)
CPC H10K 59/12 (2023.02) [H10H 20/814 (2025.01); H10H 20/8514 (2025.01)] 22 Claims
OG exemplary drawing
 
1. A light emitting diode comprising:
a semiconductor diode structure comprising an active layer disposed between an n-type layer and a p-type layer, a top surface formed by either the n-type layer or the p-type layer, a bottom surface oppositely positioned from the top surface and formed by the other of the n-type layer or the p-type layer not forming the top surface, and side surfaces connecting the top and bottom surfaces, the active layer configured to emit light upon application of a forward bias across the semiconductor diode structure;
a field plate arranged along one or more of the side surfaces of the semiconductor diode structure to apply an electric field to a perimeter region of the active layer adjacent the one or more side surfaces, the field plate spaced apart from the one or more side surfaces of the semiconductor diode structure by an insulating layer;
an electrical contact to the n-type layer,
an electrical contact to the p-type layer; and
an electrical contact to the field plate.