US 12,342,664 B2
Light emitting element, manufacturing method thereof, and display device comprising the light emitting element
Seung Geun Lee, Hwaseong-si (KR); Dong Uk Kim, Hwaseong-si (KR); Dae Hyun Kim, Hwaseong-si (KR); Se Young Kim, Gwangju (KR); Hyun Min Cho, Seoul (KR); and Hyung Rae Cha, Seoul (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Appl. No. 17/626,019
Filed by Samsung Display Co., LTD., Yongin-si (KR)
PCT Filed Jun. 3, 2020, PCT No. PCT/KR2020/007230
§ 371(c)(1), (2) Date Jan. 10, 2022,
PCT Pub. No. WO2021/006484, PCT Pub. Date Jan. 14, 2021.
Claims priority of application No. 10-2019-0083467 (KR), filed on Jul. 10, 2019.
Prior Publication US 2022/0254959 A1, Aug. 11, 2022
Int. Cl. H10H 20/831 (2025.01); H10H 20/01 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/8312 (2025.01) [H10H 20/01 (2025.01); H10H 20/8316 (2025.01); H10H 29/142 (2025.01); H10H 20/032 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A light emitting element having a shape extending in a direction, comprising:
a first semiconductor layer and a second semiconductor layer;
an active layer between the first semiconductor layer and the second semiconductor layer;
a first electrode layer disposed on a second surface opposite to a first surface of the first semiconductor layer facing the active layer;
a second electrode layer disposed on a second surface opposite to a first surface of the second semiconductor layer facing the active layer; and
an insulating film surrounding a side surface of the active layer, at least a part of a side surface of the first electrode layer, and at least a part of a side surface of the second electrode layer,
wherein a first area of the insulating film adjacent to a side surface of the active layer has a thickness larger than a thickness of a second area of the insulating film adjacent to a side surface of the first electrode layer, and
wherein a third area of the insulating film adjacent to a side surface of the second electrode layer has a thickness larger than the thickness of the second area of the insulating film adjacent to the side surface of the first electrode layer.