US 12,342,661 B2
Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structure
Amélie Dussaigne, Grenoble (FR); Benjamin Damilano, Paris (FR); Carole Pernel, Grenoble (FR); and Stéphane Vezian, Paris (FR)
Assigned to COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
Filed by COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris (FR); and CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, Paris (FR)
Filed on Jun. 6, 2022, as Appl. No. 17/805,539.
Claims priority of application No. 2105989 (FR), filed on Jun. 7, 2021.
Prior Publication US 2022/0393065 A1, Dec. 8, 2022
Int. Cl. H10H 20/815 (2025.01); H10H 20/01 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/815 (2025.01) [H10H 20/0137 (2025.01); H10H 20/812 (2025.01); H10H 20/825 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A method for manufacturing a relaxed epitaxial InGaN layer from a GaN/InGaN substrate comprising the following steps:
a) providing a first stack comprising successively a GaN or InGaN layer to be porosified and a barrier layer,
b) transferring the GaN or InGaN layer to be porosified and the barrier layer to a porosification support, the barrier layer being disposed between the porosification support and the GaN or InGaN layer to be porosified, in such a way as to form a second stack,
c) forming a mask on the GaN or InGaN layer to be porosified,
d) porosifying the GaN or InGaN layer through the mask, whereby a porous GaN or InGaN layer is formed,
e) transferring the porous GaN or InGaN layer and the barrier layer to a support of interest, the porous GaN or InGaN layer being disposed between the support of interest 31 and the barrier layer, whereby an intermediate substrate is formed,
f) forming an InGaN layer by epitaxy on the intermediate substrate, whereby a relaxed epitaxial InGaN layer is obtained on the intermediate substrate.