US 12,342,655 B2
N-type SNS thin film, photoelectric conversion element, solar cell, method for manufacturing n-type SNS thin film, and manufacturing apparatus of n-type SNS thin film
Issei Suzuki, Sendai (JP); Sakiko Kawanishi, Sendai (JP); and Hiroshi Yanagi, Kofu (JP)
Assigned to TOHOKU UNIVERSITY, Sendai (JP); and UNIVERSITY OF YAMANASHI, Kofu (JP)
Appl. No. 18/010,599
Filed by TOHOKU UNIVERSITY, Sendai (JP); and UNIVERSITY OF YAMANASHI, Kofu (JP)
PCT Filed May 6, 2021, PCT No. PCT/JP2021/017400
§ 371(c)(1), (2) Date Dec. 15, 2022,
PCT Pub. No. WO2021/261089, PCT Pub. Date Dec. 30, 2021.
Claims priority of application No. 2020-108143 (JP), filed on Jun. 23, 2020.
Prior Publication US 2023/0261130 A1, Aug. 17, 2023
Int. Cl. H10F 77/12 (2025.01); H10F 10/14 (2025.01); H01L 21/02 (2006.01); H10F 71/00 (2025.01)
CPC H10F 77/127 (2025.01) [H10F 10/14 (2025.01); H10F 77/12 (2025.01); H01L 21/0242 (2013.01); H01L 21/02568 (2013.01); H01L 21/02576 (2013.01); H01L 21/02631 (2013.01); H10F 71/00 (2025.01)] 10 Claims
OG exemplary drawing
 
1. An n-type SnS thin film having n-type conductivity, wherein
the n-type SnS thin film contains 0.002 at % to 0.2 at % of a halogen element,
the n-type SnS thin film is formed by sputtering, S plasma being irradiated on a forming film during film formation,
an average thickness is 0.100 μm to 10 μm,
a ratio (α1.1/α1.6) of an absorption coefficient α1.1 at a photon energy of 1.1 eV to an absorption coefficient α1.6 at a photon energy of 1.6 eV is 0.200 or less,
an atomic ratio (S/Sn) of a S content to a Sn content is 0.85 to 1.10, and
an activation rate of the halogen element is 60% or more.