US 12,342,649 B2
Image sensor including meta pattern layer having light resonance function
Junho Lee, Incheon (KR); Sangeun Mun, Seoul (KR); Sookyoung Roh, Yongin-si (KR); Sungmo Ahn, Yongin-si (KR); and Seokho Yun, Yongin-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jun. 16, 2022, as Appl. No. 17/841,777.
Claims priority of application No. 10-2021-0101018 (KR), filed on Jul. 30, 2021.
Prior Publication US 2023/0031010 A1, Feb. 2, 2023
Int. Cl. H10F 39/00 (2025.01); G02B 1/00 (2006.01); H10F 39/18 (2025.01)
CPC H10F 39/806 (2025.01) [G02B 1/002 (2013.01); H10F 39/182 (2025.01)] 21 Claims
OG exemplary drawing
 
1. An image sensor comprising:
a photoelectric conversion layer;
an interlayer material layer on the photoelectric conversion layer; and
a single meta pattern layer on the interlayer material layer,
wherein the meta pattern layer comprises a metasurface, the metasurface having a same phase profile as that of a lens,
wherein the meta pattern layer has a height that causes a resonance at a given wavelength of incident light to block transmission of the given wavelength through the meta pattern layer, and
wherein the metasurface includes a plurality of meta patterns, and at least two meta patterns of the plurality of meta patterns contact each other in a diagonal direction.