US 12,342,639 B2
Image sensor device
Seoksan Kim, Suwon-si (KR); Minwoong Seo, Hwaseong-si (KR); Myunglae Chu, Hwaseong-si (KR); Jong-yeon Lee, Seoul (KR); and Min-Jun Choi, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Aug. 1, 2023, as Appl. No. 18/228,959.
Application 18/228,959 is a continuation of application No. 16/882,597, filed on May 25, 2020, granted, now 11,756,968.
Claims priority of application No. 10-2019-0117504 (KR), filed on Sep. 24, 2019.
Prior Publication US 2023/0378204 A1, Nov. 23, 2023
Int. Cl. H10F 39/00 (2025.01); H04N 25/77 (2023.01)
CPC H10F 39/8023 (2025.01) [H04N 25/77 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An image sensor device, comprising:
a first substrate including a plurality of first pixel circuits; and
a second substrate including a plurality of second pixel circuits,
wherein the plurality of first pixel circuits includes a first photo detector and a second photo detector,
wherein the plurality of second pixel circuits includes:
a first memory circuit including first memory cells configured to store a first digital signal generated from the first photo detector and first dummy memory cells; and
a second memory circuit including second memory cells configured to store a second digital signal generated from the second photo detector and second dummy memory cells,
wherein the first memory circuit is disposed directly adjacent to the second memory circuit in a first direction, and
wherein one of the plurality of first pixel circuits and one of the plurality of second pixel circuits constitute one digital pixel.