| CPC H10F 39/191 (2025.01) [C09K 11/02 (2013.01); H04N 25/62 (2023.01); H10F 39/805 (2025.01); H10F 39/8057 (2025.01); H10K 30/35 (2023.02); H10K 30/353 (2023.02); H10K 85/50 (2023.02); B82Y 20/00 (2013.01); H10K 39/32 (2023.02)] | 16 Claims |

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1. An imaging device comprising:
a semiconductor substrate;
a plurality of pixel electrodes located above the semiconductor substrate and each electrically connected to the semiconductor substrate;
a counter electrode located above the plurality of pixel electrodes;
a first photoelectric conversion layer located between the counter electrode and the plurality of pixel electrodes; and
at least one first light-shielding body located in the first photoelectric conversion layer or above the first photoelectric conversion layer, wherein
the first photoelectric conversion layer contains
semiconductor quantum dots having a property of absorbing light in a first wavelength range and
a coating material that covers the semiconductor quantum dots and that has a property of absorbing light in a second wavelength range and emitting fluorescence in a third wavelength range, and
the at least one first light-shielding body absorbs or reflects light with a wavelength in at least part of the second wavelength range.
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