| CPC H10F 39/18 (2025.01) [H10F 30/26 (2025.01); H10F 30/288 (2025.01); H10F 39/1847 (2025.01); H10F 39/199 (2025.01); H10F 77/148 (2025.01); H10F 39/8063 (2025.01); H10F 39/8067 (2025.01)] | 5 Claims |
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1. A CMOS image sensor, comprising:
a plurality of micro lenses, for receiving incident light;
a substrate, disposed below the plurality of micro lenses, the substrate containing a potential well stack comprising:
a first p-well disposed below the micro lenses, a first n-well disposed below the first p-well, a second p-well disposed below the first n-well, a second n-well disposed below the second p-well, and a third p-well disposed below the second n-well, wherein a first photodiode for receiving blue light is formed at the junction between the first p-well and first n-well, a second photodiode for receiving green light is formed at the junction between the first n-well and second p-well, a third photodiode for receiving red light is formed at the junction between the second p-well and the second n-well, and a fourth photodiode for receiving infrared light is formed at the junction between the second n-well and the third p-well, and each photodiode converts light received by the photodiodes into electrical charge, and each photodiode junction is disposed at a different respective depth within the substrate; and
a plurality of active pixel sensor control circuits for converting the electrical charge into voltage;
wherein the CMOS image sensor is devoid of a selective near infrared (SNIR) filter or an IR pass filter between the plurality of micro lenses and the photodiode junctions.
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