| CPC H10D 84/617 (2025.01) [H10D 8/422 (2025.01); H10D 12/481 (2025.01); H10D 62/393 (2025.01); H10D 64/117 (2025.01)] | 17 Claims |
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1. A semiconductor device, comprising:
a semiconductor substrate which includes a drift region of a first conductive type;
a transistor portion which includes a plurality of gate structure portions in an upper surface of the semiconductor substrate;
an emitter electrode; and
a diode portion which includes a cathode region of the first conductive type, which has a higher doping concentration than the drift region, in a lower surface of the semiconductor substrate,
wherein each of the gate structure portions includes
a gate trench portion which is provided to reach the drift region from the upper surface of the semiconductor substrate,
an emitter region of the first conductive type which is provided between the upper surface of the semiconductor substrate and the drift region to abut on the gate trench portion and has a higher doping concentration than the drift region, and
a base region of a second conductive type which is provided between the emitter region and the drift region to abut on the gate trench portion,
wherein a first threshold voltage of the gate structure portion with a shortest distance to the cathode region in a top view is lower than a second threshold voltage of the gate structure portion with a longest distance to the cathode region by 0.1 V or more and 1 V or less, and
wherein the gate trench portion of each of the plurality of gate structure portions has a longitudinal direction that is the same for the plurality of gate structure portions, wherein there is a boundary between the transistor portion and the diode portion extending in the longitudinal direction, wherein the semiconductor device further comprises one or more emitter-connected trench portions each of which is conductively connected to the emitter electrode, wherein a boundary trench portion that is one of the one or more emitter-connected trench portions is disposed at the boundary between the transistor portion and the diode portion and extends in the longitudinal direction,
wherein the boundary trench portion has a transistor portion side on which the transistor portion is located, wherein the boundary trench portion has a diode portion side on which the diode portion is located, and wherein the transistor portion side of the boundary trench portion has the emitter region adjacent the boundary trench portion and there is no emitter region provided on the diode portion side of the boundary trench portion adjacent the boundary trench portion.
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