US 12,342,605 B2
Semiconductor device with fin structures
Kun-Yu Lee, Tainan (TW); Chunyao Wang, Zhubei (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on May 16, 2023, as Appl. No. 18/318,195.
Application 18/318,195 is a division of application No. 17/350,282, filed on Jun. 17, 2021, granted, now 11,688,645.
Prior Publication US 2023/0282521 A1, Sep. 7, 2023
Int. Cl. H10D 84/03 (2025.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H10D 30/01 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/038 (2025.01) [H01L 21/02356 (2013.01); H01L 21/76224 (2013.01); H10D 84/0151 (2025.01); H10D 84/834 (2025.01); H01L 21/0214 (2013.01); H01L 21/02148 (2013.01); H01L 21/02164 (2013.01); H01L 21/0217 (2013.01); H01L 21/02181 (2013.01); H01L 21/02183 (2013.01); H01L 21/02189 (2013.01); H01L 21/02192 (2013.01); H01L 21/02194 (2013.01); H01L 21/022 (2013.01); H01L 21/02271 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device structure, comprising:
a first fin structure and a second fin structure over a semiconductor substrate;
a first epitaxial structure over the first fin structure;
a second epitaxial structure over the second fin structure; and
a dielectric fin over the semiconductor substrate, wherein the dielectric fin is between the first fin structure and the second fin structure, the dielectric fin has an inner portion and a protective layer, the protective layer extends along sidewalls and a bottom of the inner portion, the protective layer has a dielectric constant higher than that of the inner portion, the protective layer has a first average grain size, the inner portion has a second average grain size, and the first average grain size is larger than the second average grain size, and a topmost surface of the inner portion is vertically higher than a bottommost surface of the first epitaxial structure.