US 12,342,600 B2
Titanium-containing diffusion barrier for CMP removal rate enhancement and contamination reduction
Shih-Kang Fu, Hsinchu (TW); Ming-Han Lee, Hsinchu (TW); and Shau-Lin Shue, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 20, 2022, as Appl. No. 17/869,702.
Application 17/869,702 is a division of application No. 17/083,230, filed on Oct. 28, 2020, granted, now 11,545,389.
Claims priority of provisional application 62/953,109, filed on Dec. 23, 2019.
Prior Publication US 2022/0367244 A1, Nov. 17, 2022
Int. Cl. H10D 64/27 (2025.01); H01L 21/28 (2025.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 30/69 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10D 64/66 (2025.01); H10D 64/68 (2025.01)
CPC H10D 64/517 (2025.01) [H01L 21/28088 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 23/5283 (2013.01); H01L 23/53204 (2013.01); H01L 23/5329 (2013.01); H10D 30/024 (2025.01); H10D 30/6211 (2025.01); H10D 64/017 (2025.01); H10D 64/667 (2025.01); H10D 30/792 (2025.01); H10D 30/797 (2025.01); H10D 62/822 (2025.01); H10D 64/691 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a dielectric layer over a substrate; and
a contact structure embedded in the dielectric layer, the contact structure comprising:
a diffusion barrier contacting the dielectric layer, the diffusion barrier comprising a titanium (Ti)-containing compound selected from the group consisting of TixMoyNz, TixMnyNy, TixCoyNy and, TixCoyTaz, wherein x is from 2 to 5, y is from 1 to 5, and z is 1 to 4;
a liner contacting the diffusion barrier, the liner comprising a noble metal; and
a conductive plug contacting the liner.