US 12,342,582 B2
4H-SiC electronic device with improved short-circuit performances, and manufacturing method thereof
Mario Giuseppe Saggio, Aci Bonaccorsi (IT); Angelo Magri', Belpasso (IT); Edoardo Zanetti, Valverde (IT); and Alfio Guarnera, Trecastagni (IT)
Assigned to STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed by STMicroelectronics S.r.l., Agrate Brianza (IT)
Filed on Sep. 8, 2023, as Appl. No. 18/464,141.
Application 18/464,141 is a continuation of application No. 17/346,771, filed on Jun. 14, 2021, granted, now 11,798,981.
Claims priority of application No. 102020000015076 (IT), filed on Jun. 23, 2020.
Prior Publication US 2024/0222424 A1, Jul. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/06 (2006.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01)
CPC H10D 62/102 (2025.01) [H10D 62/8325 (2025.01)] 9 Claims
OG exemplary drawing
 
1. A method for manufacturing an electronic device, comprising:
forming a doped region in a semiconductor body of silicon carbide (SiC), the semiconductor body having a first surface and a second surface, the doped region having a first conductivity, extending seamlessly at the entire first surface of the semiconductor body, the forming the doped region including:
forming one or more first sub-regions having a first doping density; and
forming one or more second sub-regions having a second doping density lower than the first doping density;
forming a body region, having a second conductivity opposite to the first conductivity, in the semiconductor body at the first surface;
forming a source region, having the first conductivity, in the body region at the first surface of the semiconductor body; and
forming a drain region, having the first conductivity, at the second surface.