US 12,342,581 B2
Method and device for producing an edge structure of a semiconductor component
Tobias Gamon, Warstein (DE); Reiner Barthelmess, Soest (DE); Uwe Kellner-Werdehausen, Leutenbach (DE); and Sebastian Sommer, Castrop-Rauxel (DE)
Assigned to Infineon Technologies Bipolar GmbH & Co. KG, Warstein (DE)
Filed by Infineon Technologies Bipolar GmbH & Co. KG, Warstein (DE)
Filed on Jun. 16, 2022, as Appl. No. 17/841,871.
Claims priority of application No. 102021116206.8 (DE), filed on Jun. 23, 2021.
Prior Publication US 2022/0416019 A1, Dec. 29, 2022
Int. Cl. H10D 62/10 (2025.01); H01L 21/306 (2006.01); H01L 21/67 (2006.01)
CPC H10D 62/102 (2025.01) [H01L 21/30604 (2013.01); H01L 21/6708 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method for producing an edge structure of a semiconductor component, the method comprising:
providing a semiconductor body that comprises at least two mutually spaced-apart main faces respectively having an edge, between which edges an edge face extends; and
etching a predetermined edge contour by purposely applying a chemical etchant onto the edge face by an etchant jet with simultaneous rotation of the semiconductor body about a rotation axis,
wherein the etchant jet is guided with a predetermined jet cross section, while being directed tangentially with respect to the edge face, such that the etchant jet impinges only on the edge face and only with a part of the jet cross section.