US 12,342,566 B2
Two-dimensional electron gas at interface between BASNO3 and LAINO3
Kook Rin Char, Seoul (KR); Young Mo Kim, Seoul (KR); and You Jung Kim, Seoul (KR)
Assigned to SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
Appl. No. 17/775,868
Filed by SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION, Seoul (KR)
PCT Filed Sep. 11, 2019, PCT No. PCT/KR2019/011863
§ 371(c)(1), (2) Date Oct. 27, 2022,
PCT Pub. No. WO2021/049686, PCT Pub. Date Mar. 18, 2021.
Prior Publication US 2023/0045518 A1, Feb. 9, 2023
Int. Cl. H10D 30/47 (2025.01); H01L 21/02 (2006.01)
CPC H10D 30/475 (2025.01) [H01L 21/02192 (2013.01); H01L 21/02194 (2013.01)] 6 Claims
OG exemplary drawing
 
1. An electronic device including an interface between BaSnO3 and LaInO3, the electronic device comprising:
a substrate formed of a metal oxide of non-SrTiO3 material;
a first buffer layer disposed on the substrate and formed of a BaSnO3 material;
a BLSO layer disposed on at least a portion of the first buffer layer and formed of a (Ba1-x,Lax) SnO3 material, wherein x has a value equal to or greater than 0 and less than or equal to 1;
an LIO layer at least partially disposed on at least a portion of the BLSO layer so as to form an interface between the LIO layer and the BLSO layer, and formed of an LaInO3 material; and
a first electrode layer at least partially in contact with the interface between the BLSO layer and the LIO layer, and formed of at least two or more separated portions;
wherein the LIO layer has a thickness between 15 to 17 angstroms.