US 12,342,561 B2
High-electron mobility transistor and fabrication method thereof
Chih-Tung Yeh, Taoyuan (TW); and Wen-Jung Liao, Hsinchu (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Jul. 29, 2022, as Appl. No. 17/876,552.
Claims priority of application No. 202210766966.0 (CN), filed on Jun. 30, 2022.
Prior Publication US 2024/0006511 A1, Jan. 4, 2024
Int. Cl. H10D 30/01 (2025.01); H01L 23/31 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/015 (2025.01) [H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H10D 30/47 (2025.01); H10D 62/8503 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A high-electron mobility transistor, comprising:
a substrate;
a buffer layer over the substrate;
a barrier layer over the buffer layer; and
a gate structure on the barrier layer, wherein the gate structure comprises a cap layer and a gate over the cap layer, wherein the cap layer comprises a gate-leakage suppressing region on its sidewall.