US 12,342,539 B2
Protective liner layers in 3D memory structure
Tsu Ching Yang, Taipei (TW); Sheng-Chih Lai, Hsinchu (TW); Yu-Wei Jiang, Hsinchu (TW); Kuo-Chang Chiang, Hsinchu (TW); Hung-Chang Sun, Kaohsiung (TW); Chen-Jun Wu, Hsinchu (TW); Feng-Cheng Yang, Zhudong Township (TW); and Chung-Te Lin, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 16, 2023, as Appl. No. 18/336,252.
Application 18/336,252 is a division of application No. 17/190,735, filed on Mar. 3, 2021, granted, now 11,723,199.
Prior Publication US 2023/0328980 A1, Oct. 12, 2023
Int. Cl. H10B 43/20 (2023.01); H10B 43/30 (2023.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01)
CPC H10B 43/20 (2023.02) [H10B 43/30 (2023.02); H10B 51/20 (2023.02); H10B 51/30 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a stack of dummy gate electrode layers arranged between interconnect dielectric layers over a substrate;
forming a first trench within the stack of dummy gate electrode layers;
replacing the stack of dummy gate electrode layers with gate electrode layers;
forming a continuous memory layer, a continuous channel layer, and a continuous dielectric layer within the first trench;
filling remaining portions of the first trench with a fourth dielectric material;
forming fourth openings within the fourth dielectric material to form first barrier structures within the first trench;
forming a continuous protective liner layer within the fourth openings;
forming sacrificial structures within the fourth openings;
removing portions of the continuous protective liner layer and portions of the sacrificial structures to respectively form a first protective liner layer and fifth openings within the sacrificial structures, and leaving remaining portions of the sacrificial structures in place;
forming a second protective liner layer within the fifth openings of the sacrificial structures;
forming second barrier structures within remaining portions of the fifth openings; and
removing the remaining portions of the sacrificial structures and replacing the remaining portions of the sacrificial structures with a conductive material to form source/drain conductive lines surrounded by the first protective liner layer and the second protective liner layer.