US 12,342,531 B2
Integrated circuit device
Suncheul Kim, Hwaseong-si (KR); Youngsang Lee, Hwaseong-si (KR); Yunchul Shin, Seongnam-si (KR); and Donghoon Han, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on May 2, 2022, as Appl. No. 17/734,436.
Claims priority of application No. 10-2021-0066825 (KR), filed on May 25, 2021.
Prior Publication US 2022/0384450 A1, Dec. 1, 2022
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/34 (2023.02) [H10B 12/053 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit device comprising:
a substrate including an active region defined by a device isolation layer, the substrate defining a gate trench extending across the active region;
a gate dielectric layer conformally covering an inner surface of the gate trench; and
a gate electrode filling the gate trench on the gate dielectric layer,
wherein the gate electrode is composed of crystal grains of a single metal, and
a diagonal length of at least one of the crystal grains is greater than a height of the active region that is in contact with the gate electrode.