| CPC H01S 5/06253 (2013.01) [H01S 5/0428 (2013.01); H01S 5/0601 (2013.01); H01S 5/3432 (2013.01)] | 9 Claims |
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1. A semiconductor laser comprising:
an optical resonator that has a first compound semiconductor layer containing an n-type impurity, a second compound semiconductor layer containing a p-type impurity, and a light-emitting layer provided between the first compound semiconductor layer and the second compound semiconductor layer;
a first electrode electrically connected to the first compound semiconductor layer;
a second electrode electrically connected to the second compound semiconductor layer;
an insulation layer provided to cover a part of the second compound semiconductor layer; and
a pulse injection means connected to the first electrode and the second electrode,
wherein the light-emitting layer has a multiple quantum well structure in which at least five well layers and at least five barrier layers are alternately stacked,
the optical resonator has a multi-section structure separated into at least one gain region and at least one absorption region along an oscillation direction,
the pulse injection means is configured to apply a pulse current for a duration of less than 1 ns to the first electrode and the second electrode,
an electrode area of the second electrode is set so that the excitation energy is injected for a sub-nanosecond duration into the optical resonator when the pulse current is applied to the first electrode and the second electrode,
a stray capacitance around the insulation layer is set so that the excitation energy is injected for a sub-nanosecond duration into the optical resonator when the pulse current is applied to the first electrode and the second electrode, and
the semiconductor laser generates optical pulses having a pulse width shorter than 2.5 times a photon lifetime in the optical resonator.
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