US 12,341,315 B2
Optical semiconductor chip
Shigeru Kanazawa, Musashino (JP); Yuta Ueda, Musashino (JP); Takahiko Shindo, Musashino (JP); and Meishin Chin, Musashino (JP)
Assigned to Nippon Telegraph and Telephone Corporation, Tokyo (JP)
Appl. No. 17/915,281
Filed by Nippon Telegraph and Telephone Corporation, Tokyo (JP)
PCT Filed Apr. 17, 2020, PCT No. PCT/JP2020/016937
§ 371(c)(1), (2) Date Sep. 28, 2022,
PCT Pub. No. WO2021/210177, PCT Pub. Date Oct. 21, 2021.
Prior Publication US 2023/0139615 A1, May 4, 2023
Int. Cl. G02F 1/01 (2006.01); G02F 1/015 (2006.01); G02F 1/025 (2006.01); H01S 5/00 (2006.01); H01S 5/12 (2021.01)
CPC H01S 5/0085 (2013.01) [G02F 1/0155 (2021.01); G02F 1/025 (2013.01); H01S 5/12 (2013.01)] 5 Claims
OG exemplary drawing
 
1. An optical semiconductor chip, comprising:
a laser light source;
an optical modulator optically connected to the laser light source and having an optical waveguide structure, the optical waveguide structure having a first type semiconductor base layer, a light absorption layer and a second type semiconductor layer arranged in this order;
an electrode pad receiving a modulation signal;
a modulation electrode formed on the second type semiconductor layer; and
a high frequency line connecting the electrode pad and the modulation electrode and providing inductance in series with respect to a depletion layer capacitance of the optical waveguide structure;
wherein a portion under the high frequency line and the electrode pad is composed of a material having a dielectric constant lower than a dielectric constant of the semiconductor base layer,
the material is configured such that the electrode pad is higher than the modulation electrode, and
the high frequency line is a meander wiring.