US 12,341,238 B2
Tunnel diode-based backscattering RFID system
Aline Eid, Atlanta, GA (US); Jimmy Georges Donald Hester, Atlanta, GA (US); and Emmanouil Tentzeris, Atlanta, GA (US)
Assigned to GEORGIA TECH RESEARCH CORPORATION, Atlanta, GA (US)
Appl. No. 17/908,639
Filed by Georgia Tech Research Corporation, Atlanta, GA (US)
PCT Filed Mar. 8, 2021, PCT No. PCT/US2021/021343
§ 371(c)(1), (2) Date Sep. 1, 2022,
PCT Pub. No. WO2021/236203, PCT Pub. Date Nov. 25, 2021.
Claims priority of provisional application 62/986,045, filed on Mar. 6, 2020.
Prior Publication US 2023/0093926 A1, Mar. 30, 2023
Int. Cl. H01Q 1/24 (2006.01); G06K 19/07 (2006.01)
CPC H01Q 1/248 (2013.01) [G06K 19/0723 (2013.01)] 27 Claims
OG exemplary drawing
 
1. A backscattering system comprising:
a first tunnel diode having an anode and a cathode; and
a biasing source configured to bias the first tunnel diode in a negative differential resistance region;
wherein the first tunnel diode is configured to:
modulate an interrogation signal to produce a backscatter signal; and
operate simultaneously as an oscillator and a reflection amplifier.