| CPC H01M 4/48 (2013.01) [H01M 4/0428 (2013.01); H01M 4/625 (2013.01); H01M 10/0525 (2013.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01)] | 2 Claims |

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1. A composite negative electrode material, comprising silicon-containing particles and a carbon covering layer, wherein the carbon covering layer covers at least part of surface of the silicon-containing particles,
wherein in a Raman spectrum, the composite negative electrode material has a characteristic peak A of silicon between 450 cm−1 and 550 cm−1, a characteristic peak B of carbon between 1300 cm−1 and 1400 cm−1, a characteristic peak C of carbon between 1530 cm−1 and 1630 cm−1, and a characteristic peak D of graphene structure between 2500 cm−1 and 2750 cm−1, a ratio IA/ID of a peak intensity IA of the characteristic peak A of silicon to a peak intensity ID of the characteristic peak D of graphene structure is greater than 1 and less than 30, and a ratio ID/IB of the peak intensity ID of the characteristic peak D of graphene structure to a peak intensity IB of the characteristic peak B of carbon is greater than 0 and less than 1.
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