US 12,341,133 B2
Stacked die RF circuits and package method thereof
Cemin Zhang, Chino, CA (US)
Assigned to Chengdu Sicore Semiconductor Corp. Ltd., Sichuan (CN)
Filed by Chengdu Sicore Semiconductor Corp. Ltd., Chengdu (CN)
Filed on Jun. 8, 2022, as Appl. No. 17/835,650.
Claims priority of application No. 202210320285.1 (CN), filed on Mar. 29, 2022.
Prior Publication US 2023/0317682 A1, Oct. 5, 2023
Int. Cl. H01L 25/065 (2023.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 23/481 (2013.01); H01L 23/5226 (2013.01); H01L 23/528 (2013.01); H01L 24/14 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81815 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A stacked die radio-frequency (RF) circuit structure comprising:
a first die comprising one or more ground (GND) bumping pads and a first-die RF signal path coupled to an RF signal bumping pad on the first die;
a second die comprising a second-die signal pad and a backside GND layer, one or more through-substrate GND vias; and
one or more bumping pillars coupled between the first die and the second die, the one or more bumping pillars comprise one or more GND bumping pillars and one or more RF bumping pillars, the one or more GND bumping pads are grounded to the backside GND layer through the one or more GND bumping pillars and the one or more through-substrate GND vias, the RF signal bumping pad couples to the second-die signal pad through an RF bumping pillar of the one or more RF bumping pillars; and
wherein the one or more GND bumping pads comprise at least one GND bumping pad disposed next to the RF signal bumping pad to construct a pad structure that is a ground-signal-ground (GSG) pad structure, a ground-signal (GS) pad structure, or a signal-ground (SG) pad structure, the pad structure has a characteristic impedance matching the characteristic impedance of the first-die RF signal path.